A graphene platform on silicon for More-than-Moore technologies

Distinguished Lecturer Presentation.
Harnessing graphene’s properties on a silicon platform could augment integrated technologies with a broad range of novel miniaturized functionalities. We will review the learnings from the development of our epitaxial graphene on silicon carbide on silicon technology and some of its most promising applications. This platform allows to obtain any complex graphene -coated silicon carbide 3D nanostructures in a site – selective fashion at the wafer -scale and with sufficient adhesion for integration. Key capabilities for nano-optics and metasurfaces in the MIR are specifically unlocked by the graphene/silicon carbide combination.
We have recently demonstrated that the sheet resistance of epitaxial graphene on 3C-SiC on silicon is comparable to that of epitaxial graphene on SiC wafers, despite substantially smaller grains. We also indicate that the control of the graphene interfaces, particularly when integrated, can be a more important factor than achieving large grain sizes. In addition, we show that well- engineered defects in graphene are preferable to defect -free graphene for most electrochemical applications, including biosensing. Promising examples of application of this technology in the More than Moore domain include integrated energy storage, MIR sensing and detection, and sensors for electro-encephalography.
Speaker(s): Francesca Iacopi,
Room: Auditório Valentim, Bldg: J, Av. Humberto de Alencar Castelo Branco 3972, São Bernardo do Campo, Sao Paulo, Brazil, 09850-901