Two-dimensional (2D) materials have emerged as promising candidates for future nanoelectronic and optoelectronic technologies due to their unique and highly tunable electronic properties. Understanding the role of defects, oxidation mechanisms, and interfacial phenomena is essential for optimizing the performance of devices based on these materials. In this seminar, Dr. Santosh KC will present recent advances in the computational study of transition metal dichalcogenides (TMDs), focusing on surface defects, oxidation processes, semiconductor–dielectric interfaces, and semiconductor–metal contacts. The talk will highlight how atomic-scale modeling provides valuable insights into the electronic behavior of these systems and supports the development of next-generation semiconductor technologies. The seminar will also discuss emerging two-dimensional magnetic materials and the importance of van der Waals interactions in accurately describing their atomic and magnetic properties. Key topics: - Surface defects and oxidation in 2D materials - Semiconductor–dielectric and semiconductor–metal interfaces - Electronic properties of transition metal dichalcogenides (TMDs) - Atomic-scale computational modeling - Emerging 2D magnetic materials - Applications in nanoelectronics and optoelectronics Co-sponsored by: Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional (Cinvestav-IPN) Speaker(s): Dr. Santosh KC Agenda: AGENDA 🤖12:00 PM – 12:05 PM Welcome and Opening Remarks IEEE EDS Student Chapters IPN & CINVESTAV 12:05 PM – 12:10 PM Speaker Introduction 12:10 PM – 12:50 PM Technical Seminar Surface and Interface Properties of 2D Materials Dr. Santosh KC San Diego State University ☕12:50 PM – 1:00 PM Q&A Session and Closing Remarks Bldg: Auditorio de Ingeniería Eléctrica, Av Instituto Politécnico Nacional 2508, San Pedro Zacatenco, Gustavo A. Madero, Ciudad de México, Distrito Federal, Mexico, 07360