Obtaining nanometric films of GaN by PEALD technique for use in MOS structures

Room: Electric Engineering Auditorium, Bldg: Computer Department, Av. Instituto Politécnico Nacional 2508, Col. San Pedro Zacatenco, Alcaldía Gustavo A. Madero, CDMX, Mexico City, Distrito Federal, Mexico, 07360, Virtual: https://events.vtools.ieee.org/m/303604

On the behalf of the second IEEE-EDS Mexico Technical Meeting 2022 (MTM_2-2022), organized jointly by the IEEE EDS Mexico Chapter and the IEEE EDS CINVESTAV-IPN Student Branch Chapter from the Section of Solid-State Electronics at the Center for Research and Advanced Studies of the Polytechnic National Institute (CINVESTAV-IPN), we extend the invitation for the conference with an IEEE Member, that presents his most recent results about several issues on GaN films grown by PEALD technique for its use in MOS structures. The MTM_2-2022 will be held through TEAMS plataform at March 14th, 2022. Co-sponsored by: Center for Research and Advanced Studies of the National Polytechnique Institute, CINVESTAV-IPN. Speaker(s): Prof. Joaquín Alvarado, Agenda: Schedule Monday 14th—TEAMS Plataform Speaker 15:30 - 17:30 Obtaining nanometric films of GaN by PEALD technique for use in MOS structures Dr. Joaquín Alvarado Room: Electric Engineering Auditorium, Bldg: Computer Department, Av. Instituto Politécnico Nacional 2508, Col. San Pedro Zacatenco, Alcaldía Gustavo A. Madero, CDMX, Mexico City, Distrito Federal, Mexico, 07360, Virtual: https://events.vtools.ieee.org/m/303604